High gain single GaAs nanowire photodetector

High gain single GaAs nanowire photodetector

GaAs/AlGaAs nanowire photodetector.

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...

Novel GaAs photodetector with gain for long wavelength detection

A novel photodetector based upon annealed low temperature molecular beam epitaxy GaAs capable of detecting wavelengths out to 1.5 mm has been developed. The device utilizes a photoconductive detector with a high photo-generated carrier lifetime to transit time ratio in order to achieve a high internal gain. The sensitivity to illumination with photons of sub-bandgap energies is achieved due to ...

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity.

We report the fabrication and optical response of boron-doped single silicon nanowire-based metal-semiconductor-metal photodetector. Typical single nanowire devices with diameter of ∼80-100 nm and electrode spacing of ∼1 μm were made using electron-beam lithography from nanowires, grown by a metal-assisted chemical etching process. A high responsivity, of the order of 10(4) A W(-1), was observe...

Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector.

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photocon...